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Ordering number : ENA1480
TIG062E8
SANYO Semiconductors
DATA SHEET
TIG062E8
Features
* * * * * * *
N-Channel IGBT
Light-Controlling Flash Applications
Low-saturation voltage. Low voltage drive (3V). Enhansment type. Built-in Gate-to-Emitter protection diode. Mounting Height 0.9mm, Mounting Area 8.12mm2. dv / dt guarantee*. Halogen free compliance.
Specifications
Absolute Maximum Ratings at Ta=25C
Parameter Collector-to-Emitter Voltage Gate-to-Emitter Voltage (DC) Gate-to-Emitter Voltage (Pulse) Collector Current (Pulse) Maximum Collector-to-Emitter dv / dt Channel Temperature Storage Temperature Symbol VCES VGES VGES ICP1 ICP2 ICP3 dVCE / dt Tch Tstg PW1ms CM=150F, VGE=3V CM=100F, VGE=3.3V CM=100F, VGE=4V VCE320V, starting Tch=25C Conditions Ratings 400 5 6 100 130 150 400 150 -40 to +150 Unit V V V A A A V / s C C
Marking : ZC * : Concerning dv / dt (slope of Collector Voltage at the time of Turn-OFF), dv / dt > 400V / s will be 100% screen-detected in the circuit shown as Fig. 1.
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment.
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61009PJ MS IM TC-00001992 No. A1480-1/5
TIG062E8
Electrical Characteristics at Ta=25C
Parameter Collector-to-Emitter Breakdown Voltage Collector-to-Emitter Cutoff Current Gate-to-Emitter Leakage Current Gate-to-Emitter Threshold Voltage Collector-to-Emitter Saturation Voltage Input Capacitance Output Capacitance Reverse Transfer Capacitance Symbol V(BR)CES ICES IGES VGE(off) VCE(sat) Cies Coes Cres Conditions IC=2mA, VGE=0V VCE=320V, VGE=0V VGE=6V, VCE=0V VCE=10V, IC=1mA IC=100A, VGE=3V VCE=10V, f=1MHz VCE=10V, f=1MHz VCE=10V, f=1MHz 0.4 5 2400 32 24 Ratings min 400 10 10 0.9 8 typ max Unit V A A V V pF pF pF
Package Dimensions
unit : mm (typ) 7011A-004
Electrical Connection
8 7 6 5
Top View 0.25 2.9 0.15 8 5 0 t o 0.02 2.8 2.3
1 : Emitter 2 : Emitter 3 : Emitter 4 : Gate 5 : Collector 6 : Collector 7 : Collector 8 : Collector
1 2 3 4
Top view
0.25
1 0.65
4 0.3
0.9
1 : Emitter 2 : Emitter 3 : Emitter 4 : Gate 5 : Collector 6 : Collector 7 : Collector 8 : Collector
Bot t om View
0.07
SANYO : ECH8
Fig.1 Large Current R Load Switching Circuit
RL CM RG +
VCC
TIG062E8 100k
Note1. Gate Series Resistance RG 250 is recommended for protection purpose at the time of turn OFF. However, if dv / dt 400V / s is satisfied at customer's actual set evaluation, RG < 250 can also be used. Note2. The collector voltage gradient dv / dt must be smaller than 400V / s to protect the device when it is turned off.
No. A1480-2/5
TIG062E8
150
IC -- VCE
V =4 GE .0V
3.0V
150
IC -- VGE
--2 5 C
2
VCE=10V
Collector Current, IC -- A
Collector Current, IC -- A
100
2.5V
100
75
75
1.8V
50
50
25
25
0
0
1
2
3
4
5
6
7
8
9
10
0
0
1
75 C
3
Tc =
25 C
4
125
125
5 IT14699
Collector-to-Emitter Voltage, VCE -- V
10
VCE -- VGE
IT14698 10
Gate-to-Emitter Voltage, VGE -- V
VCE -- VGE
IC=100A
Collector-to-Emitter Voltage, VCE -- V
Collector-to-Emitter Voltage, VCE -- V
IC=150A
9 8 7 6 5 4 3 2 1 1 2 3 4 5 6 IT14700
9 8 7 6 5 4 3 2 1 1 2 3 4 5 6 IT14701
Tc=75C 25C --25C
Tc=75C
25C
--25C
Gate-to-Emitter Voltage, VGE -- V
11 10
VCE(sat) -- Tc
Gate-to-Emitter Voltage, VGE -- V Gate-to-Emitter Cutoff Voltage, VGE(off) -- V
0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 --50
VGE(off) -- Tc
Collector-to-Emitter Saturation Voltage, VCE(sat) -- V
VCE=10V IC=1mA
9 8 7 6 5 4 3 2 --50 --25 0
=15 , IC =4V V GE
0A
00 I =1 =3V, C VGE
A
25
50
75
100
125
150
--25
0
25
50
75
100
125
150
5 3 2
Cies, Coes, Cres -- VCE
Cies
Case Temperature, Tc -- C
IT14702
Case Temperature, Tc -- C
5 3
SW Time -- ICP
td(o ff)
tf
IT14703
f=1MHz Switching Time, SW Time -- ns
Cies, Coes, Cres -- pF
1000 7 5 3 2 100 7 5 3 2 10 7
2
1000 7 5 3 2
Test circuit Fig.1 VGE=3V VCC=320V RG=250 CM=150F PW=50s
tr
Coes
Cres
0 2 4 6 8 10 12 14 16 18 20
td(on)
100 7 10 2 3 5 7 100 2 3 5 IT14705
Collector-to-Emitter Voltage, VCE -- V
IT14704
Collector Current (Pulse), ICP -- A
No. A1480-3/5
TIG062E8
5 3
SW Time -- RG
800 700
dv / dt -- RG
Test circuit Fig.1 VGE=3V VCC=320V ICP=100A PW=50s
Switching Time, SW Time -- ns
2
Turn OFF, dv / dt -- V / s
1000 7 5 3 2 100 7 5 3 2
tf
600 500 400 300 200 100 0 0
ff) t d(o tr
on t d( )
Test circuit Fig.1 VGE=3V VCC=320V ICP=100A CM=150F PW=50s
2 3 5 1000 IT14706 7
2
3
5
7
100
50
100
150
200
250
300
350
400
450
500
Gate Series Resistance, RG --
160
ICP -- VGE
Tc=25C
Gate Series Resistance, RG --
300
CM -- ICP1
IT14707
Collector Current (Pulse), ICP -- A
140 120 100 80 60 40 20 0 0
VCE=320V CM=100F
Tc=70C
Maximum Capacitor, CM -- F
250
Tc=25C
200
Tc=70C
150
100
50
1
2
3
4
5
6 IT14708
0
VGE=3V VCE=320V
0 20 40 60 80 100 120 140 160
Gate-to-Emitter Voltage, VGE -- V
300
CM -- ICP2
Collector Current (Pulse)1, ICP1 -- A
300
CM -- ICP3
IT14709
Maximum Capacitor, CM -- F
Maximum Capacitor, CM -- F
250
250
200
Tc=25C Tc=70C
200
Tc=25C Tc=70C
150
150
100
100
50
0
VGE=3.3V VCE=320V
0 20 40 60 80 100 120 140 160
50
0
VGE=4V VCE=320V
0 20 40 60 80 100 120 140 160
Collector Current (Pulse)2, ICP2 -- A
IT14710
Collector Current (Pulse)3, ICP3 -- A
IT14711
No. A1480-4/5
TIG062E8
Note : TIG062E8 has protection diode between gate and emitter but handling it requires sufficient care to be taken.
SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above.
This catalog provides information as of June, 2009. Specifications and information herein are subject to change without notice.
PS No. A1480-5/5

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